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| MITSUBISHI SEMICONDUCTOR TRIAC BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS 3.20.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 * * * * * IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 2 Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets * refrigerator * washing machine * electric fan, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial power frequency, sine full wave 360 conduction, Tc=71C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 16 160 107.5 5.0 0.5 10 2 -40 ~ +125 -40 ~ +125 Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=25A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 30 V5 30 V5 30 V5 -- 3.0 -- Unit mA V V V V mA mA mA V C/ W V/s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. V5. High sensitivity (IGT20mA) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/ms 3. Peak off-state voltage VD=400V L 10 Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 12 600 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) Tj = 125C Tj = 25C 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IGM = 2A 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IFGT I, IRGT I IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) MAXIMUM ON-STATE POWER DISSIPATION TRANSIENT THERMAL IMPEDANCE (C/W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 NO FINS ON-STATE POWER DISSIPATION (W) 103 40 35 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 102 101 100 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) AMBIENT TEMPERATURE (C) 140 120 100 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) T2 , G TYPICAL - T2 , G- EXAMPLE + + -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION LACHING CURRENT (mA) + T2 , G- TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE Tj = 125C I QUADRANT III QUADRANT #2 COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz VOLTAGE WAVEFORM BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) (dv/dt)C IT t VD (di/dt)C 120 100 80 60 40 20 CURRENT WAVEFORM t #1 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) 101 I QUADRANT 7 5 3 MINIMUM 2 CHARACIII QUADRANT 100 TERISTICS 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IFGT I IRGT I 6V A V RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IRGT III TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Feb.1999 |
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